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1

Dynamics of carrier tunneling between vertically aligned double quantum dots

Tackeuchi, Atsushi, Kuroda, Takamasa, Mase, Kazuo, Nakata, Yoshiaki, Yokoyama, Naoki

Journal:

Physical Review B

Year:

2000

Language:

english

File:

PDF, 79 KB

english, 2000

2

Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling

Tackeuchi, Atsushi, Inata, Tsuguo, Muto, Shunichi, Miyauchi, Eizo

Journal:

Japanese Journal of Applied Physics

Year:

1989

File:

PDF, 549 KB

1989

3

Femtosecond Saturable Absorption Recovery in a Type-II Tunneling Bi-Quantum Well for Long-Wavelength Operation

Y. Matsui, K. Ogawa, A. Tackeuchi, Y. Ogawa, A. Suzuki

Journal:

physica status solidi (b)

Year:

1997

Language:

english

File:

PDF, 142 KB

english, 1997

4

Time-Resolved Photoluminescence Study of InGaN MQW with a p-Contact Layer

T. Kuroda, R. Sasou, A. Tackeuchi, H. Sato, N. Horio, C. Funaoka

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 94 KB

english, 2001

5

InGaAs/InAlAs in-plane superlattices grown on slightly misoriented (110) InP substrates by molecular beam epitaxy

Yoshiaki Nakata, Osamu Ueda, Atsushi Tackeuchi, Satoshi Nakamura, Shunichi Muto

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 411 KB

english, 1995

6

Ultrafast exciton spin relaxation in GaAs/AlGaAs and CdMnTe multiple quantum wells

Y. Takagi, S. Adachi, S. Takeyama, A. Tackeuchi, S. Muto, J.J. Dubowski

Journal:

Journal of Luminescence

Year:

1994

Language:

english

File:

PDF, 329 KB

english, 1994

7

Γ-X electron transfer in type II tunneling bi-quantum wells

Atsushi Tackeuchi, Uwe Strauß, Wolfgang W. Rühle, Tsuguo Inata, Shunichi Muto

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 332 KB

english, 1994

8

10-nm-wire fabrication in GaAs/AlGaAs MQWs by Cl2 reactive ion beam etching using SiO2 sidewall masks

H. Arimoto, H. Kitada, Y. Sugiyama, A. Tackeuchi, A. Endo, S. Muto

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 356 KB

english, 1993

9

Ultrafast optical sampling spectroscopy of exciton dynamics in quantum wells

Satoru Adachi, Shojiro Takeyama, Yoshihiro Takagi, Atsushi Tackeuchi, Shunichi Muto

Journal:

Progress in Crystal Growth and Characterization of Materials

Year:

1996

Language:

english

File:

PDF, 245 KB

english, 1996

10

Novel ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layers

Qing Yang, Yu Saeki, Sotaro Izumi, Takao Nukui, Atsushi Tackeuchi, Akihiro Ishida, Hirokazu Tatsuoka

Journal:

Applied Surface Science

Year:

2010

Language:

english

File:

PDF, 800 KB

english, 2010

11

Spin relaxation and antiferromagnetic coupling in semiconductor quantum dots

A. Tackeuchi, T. Kuroda, K. Yamaguchi, Y. Nakata, N. Yokoyama, T. Takagahara

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2006

Language:

english

File:

PDF, 248 KB

english, 2006

12

Exciton spin dynamics in GaAs quantum wells

S. Adachi, T. Miyashita, S. Takeyama, Y. Takagi, A. Tackeuchi

Journal:

Journal of Luminescence

Year:

1997

Language:

english

File:

PDF, 192 KB

english, 1997

13

Localized exciton dynamics in InGaN quantum well structures

Shigefusa F. Chichibu, Takashi Azuhata, Hajime Okumura, Atsushi Tackeuchi, Takayuki Sota, Takashi Mukai

Journal:

Applied Surface Science

Year:

2002

Language:

english

File:

PDF, 218 KB

english, 2002

14

Antiferromagnetic coupling between semiconductor quantum dots

A. Tackeuchi, T. Kuroda, R. Sasou, Y. Nakata, N. Yokoyama

Journal:

Physica B: Condensed Matter

Year:

2002

Language:

english

File:

PDF, 151 KB

english, 2002

15

Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

Atsushi Tackeuchi, Takamasa Kuroda, Shunichi Muto, Osamu Wada

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 118 KB

english, 1999

16

Carrier dynamics of quantum confined structures

Shunichi Muto, Atsushi Tackeuchi

Journal:

Materials Science and Engineering: R: Reports

Year:

1998

Language:

english

File:

PDF, 2.04 MB

english, 1998

17

No spin polarization of carriers in InGaN

A Tackeuchi, T Kuroda, A Shikanai, T Sota, A Kuramata, K Domen

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2000

Language:

english

File:

PDF, 87 KB

english, 2000

18

Observation of interdot tunneling process of spin-polarized electrons

A Tackeuchi, Y Nakata, R Sasou, K Mase, T Kuroda, N Yokoyama

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2001

Language:

english

File:

PDF, 117 KB

english, 2001

19

Direct observation of phonon relaxation bottleneck in InAs quantum dots of high-uniformity

T. Kitamura, R. Ohtsubo, M. Murayama, T. Kuroda, K. Yamaguchi, A. Tackeuchi

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 123 KB

english, 2003

20

Observation of spin Pauli blocking in InAs high-uniform quantum dots

M. Murayama, R. Ohtsubo, T. Kitamura, T. Kuroda, K. Yamaguchi, A. Tackeuchi

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 261 KB

english, 2003

21

Time-Resolved Electroluminescence Study of Green Light-Emitting Diode

T. Kuroda, N. Horio, K. Taniguchi, H. Sato, C. Funaoka, A. Tackeuchi

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 183 KB

english, 2003

22

Picosecond spin relaxations of acceptor-bound exciton and A-band free exciton in wurtzite GaN

A. Tackeuchi, H. Otake, T. Fujita, T. Kuroda, T. Chinone, J.-H. Liang, M. Kajikawa

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 236 KB

english, 2006

23

Energy relaxation time of hot carriers photoexcited in InGaN

T. Ushiyama, T. Toizumi, Y. Nakazato, A. Tackeuchi

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 164 KB

english, 2008

24

Generation of highly circularly polarized light from uniform InAs/GaAs quantum dots

K. Kusunoki, N. Tsukiji, T. Umi, A. Tackeuchi, K. Yamaguchi

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 243 KB

english, 2008

25

Carrier spin relaxation in undoped GaAs double quantum wells

S. L. Lu, T. Ushiyama, A. Tackeuchi, S. Muto

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 265 KB

english, 2008

26

Competition between quantum-confined Stark effect and free-carrier screening effect in AlGaN/GaN multiple quantum wells

T. Fujita, T. Toizumi, Y. Nakazato, A. Tackeuchi, T. Chinone, J. H. Liang, M. Kajikawa

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 394 KB

english, 2008

27

Carrier density dependence of nonresonant carrier tunneling in GaAs double quantum wells – effect of exciton and free carrier thermodynamic

S. L. Lu, T. Ushiyama, A. Tackeuchi, S. Muto

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 241 KB

english, 2008

28

Ultrafast all-optical modulation by near-infrared intersubband transition in n-doped InGaAs/AlAsSb quantum wells

A. Neogi, H. Yoshida, T. Mozume, N. Georgiev, T. Akiyama, A. Tackeuchi, O. Wada

Journal:

Optical and Quantum Electronics

Year:

2001

Language:

english

File:

PDF, 383 KB

english, 2001

29

Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

He, W., Lu, S. L., Jiang, D. S., Dong, J. R., Tackeuchi, A., Yang, H.

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 490 KB

english, 2012

30

Fast recovery of excitonic absorption bleaching in tunneling Bi-quantum well

Atsushi Tackeuchi, Tsuguo Inata, Shunichi Muto, Yoshihiro Sugiyama, Toshio Fujii

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

1992

Language:

english

File:

PDF, 635 KB

english, 1992

31

Study of tunneling time in tunneling BI-quantum-well and resonant tuneling barrier structures

Yoshihiro Sugiyama, Tsuguo Inata, Atsushi Tackeuchi, Yoshiaki Nakata, Satoshi Nakamura, Shunichi Muto

Journal:

Microwave and Optical Technology Letters

Year:

1994

Language:

english

File:

PDF, 487 KB

english, 1994

32

Coupling of spontaneous emission from GaN-AlN quantum dots into silver surface plasmons

Neogi, Arup, Morkoç, Hadis, Kuroda, Takamasa, Tackeuchi, Atsushi

Journal:

Year:

2005

Language:

english

File:

PDF, 684 KB

english, 2005

33

Optical Devices: Enhancement of Spontaneous Emission Rate by Resonant Surface Plasmon Coupling

Neogi, Arup, Lee, Chang-Won, Everitt, Henry O., Kuroda, Takamasa, Tackeuchi, Atsushi, Yablonovitch, Eli

Journal:

Optics and Photonics News

Year:

2002

Language:

english

File:

PDF, 46 KB

english, 2002

34

Size dependence of carrier recombination efficiency in GaN quantum dots

Neogi, A., Everitt, H., Morkoc, H., Kuroda, T., Tackeuchi, A.

Journal:

IEEE Transactions on Nanotechnology

Year:

2005

Language:

english

File:

PDF, 127 KB

english, 2005

35

Ultrafast all-optical spin polarization switch using quantum-well etalon

Nishikawa, Y., Tackeuchi, A., Yamaguchi, M., Muto, S., Wada, O.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

1996

Language:

english

File:

PDF, 161 KB

english, 1996

36

Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE

Shunichi Muto, Atsushi Tackeuchi, Tsuguo Inata, Eizo Miyauchi, Toshio Fujii

Journal:

Surface Science

Year:

1990

Language:

english

File:

PDF, 314 KB

english, 1990

37

Picosecond absorption recovery of 100 nm GaAs/AlGaAs MQW wires

Atsushi Tackeuchi, Hideki Kitada, Hiroshi Arimoto, Yoshihiro Sugiyama, Tsuguo Inata, Yasuhiro Yamaguchi, Yoshiaki Nakata, Satoshi Nakamura, Shunichi Muto

Journal:

Surface Science

Year:

1992

Language:

english

File:

PDF, 389 KB

english, 1992

38

Luminescence energy shift and carrier lifetime change dependence on carrier density in In[sub 0.12]Ga[sub 0.88]N/In[sub 0.03]Ga[sub 0.97]N quantum wells

Kuroda, Takamasa, Tackeuchi, Atsushi, Sota, Takayuki

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 341 KB

english, 2000

39

Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling

Neogi, Arup, Lee, Chang-Won, Everitt, Henry O., Kuroda, Takamasa, Tackeuchi, Atsushi, Yablonovitch, Eli

Journal:

Physical Review B

Year:

2002

Language:

english

File:

PDF, 289 KB

english, 2002

40

Exciton Localization in Vertically and Laterally Coupled GaN/AlN Quantum Dots

Neogi, A., Morkoç, H., Kuroda, T., Tackeuchi, A., Kawazoe, T., Ohtsu, M.

Journal:

Year:

2005

Language:

english

File:

PDF, 273 KB

english, 2005

41

Localized and free exciton spin relaxation dynamics in GaInNAs∕GaAs quantum well

Lu, S. L., Bian, L. F., Uesugi, M., Nosho, H., Tackeuchi, A., Niu, Z. C.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 671 KB

english, 2008

42

Carrier recombination dynamics of MBE grown InGaAsP layers with 1eV bandgap for quadruple-junction solar cells

Ji, Lian, Lu, Shulong, Wu, Yuanyuan, Dai, Pai, Bian, Lifeng, Arimochi, Masayuki, Watanabe, Tomomasa, Asaka, Naohiro, Uemura, Mitsunori, Tackeuchi, Atsushi, Uchida, Shiro, Yang, Hui

Journal:

Solar Energy Materials and Solar Cells

Year:

2014

Language:

english

File:

PDF, 592 KB

english, 2014

43

Direct observation of picosecond spin relaxation of excitons in GaAs/AlGaAs quantum wells using spin-dependent optical nonlinearity

Tackeuchi, Atsushi, Muto, Shunichi, Inata, Tsuguo, Fujii, Toshio

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 519 KB

english, 1990

44

Observation of optical anisotropy of highly uniform InAs quantum dots

Uemura, M., Ohta, J., Yamaguchi, R., Yamaguchi, K., Tackeuchi, A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 377 KB

english, 2013

45

The Current Status of Semiconductor Tunnelling Devices || Resonant Tunnelling Hot Electron Transistors: Present Status and Future Prospects

N. Yokoyama, K. Imamura, M. Takatsu, T. Mori, T. Adachihara, Y. Sugiyama, Y. Sakuma, A. Tackeuchi and S. Muto

Journal:

Philosophical Transactions Mathematical Physical & Engineering Sciences

Year:

1996

Language:

english

File:

PDF, 1.64 MB

english, 1996

46

Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells

Tackeuchi, Atsushi, Kuroda, Takamasa, Muto, Shunichi, Nishikawa, Yuji, Wada, Osamu

Journal:

Japanese Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 229 KB

english, 1999

47

Enhanced radiative efficiency in gan quantum dots grown by molecular beam epitaxy

Neogi, A., Everitt, H., Morko, H., Kuroda, T., Tackeuchi, A.

Journal:

IEEE Transactions on Nanotechnology

Year:

2003

Language:

english

File:

PDF, 343 KB

english, 2003

48

Nanosecond excitonic spin relaxation in cubic GaN

Tackeuchi, Atsushi, Otake, Hirotaka, Ogawa, Yusuke, Ushiyama, Takafumi, Fujita, Taisuke, Takano, Fumiyoshi, Akinaga, Hiro

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 390 KB

english, 2006

49

Ultrafast optical sampling pump-probe measurement of exciton spin relaxation in GaAs/AlGaAs quantum wells

Adachi, Satoru, Takeyama, Shojiro, Takagi, Yoshihiro, Tackeuchi, Atsushi, Muto, Shunichi

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 313 KB

english, 1996

50

[IEEE Quantum Electronics and Laser Science (QELS). Postconference Digest - Baltimore, MD, USA (2003.6.6-2003.6.6)] Postconference Digest Quantum Electronics and Laser Science, 2003. QELS. - Effects of strain on carrier recombination in GaN quantum dots

Neogi, A., Everitt, H.O., Morkoc, H., Kuroda, T., Tackeuchi, A.

Year:

2003

Language:

english

File:

PDF, 173 KB

english, 2003